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Exciton relaxation dynamics of CdSe and quasi-type-II CdSe/CdS core/shell nanocrystals were examined using femtosecond two-dimensional electronic spectroscopy (2DES). The use of 2DES allowed for determination of structure-specific and state-resolved carrie ...
Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...
The trapping dynamics of conduction-band electrons in colloidal degenerately doped n-CdSe nanocrystals prepared by photochemical reduction (photodoping) were measured by direct optical methods. The nanocrystals show spontaneous electron trapping with distr ...
This thesis is devoted to the study of microcavity polariton systems, in which the strong coupling occurs between more than one exciton or photon modes i.e. multimode polaritons. The first part of this work states the theoretical background of light-matter ...
Time-reversal symmetry and broken spin degeneracy enable the exploration of spin and valley quantum degrees of freedom in monolayer transition-metal dichalcogenides. While the strength of the large spin splitting in the valance band of these materials is n ...
The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons wa ...
We examine the effects of CdS shell growth on photochemical reduction of colloidal CdSe quantum dots (QDs) and describe the spectroscopic properties of the resulting n-type CdSe/CdS QDs. CdS shell growth greatly slows electron trapping. Because of this imp ...
Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers ...
Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombinati ...
The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al, Ga) N shell with a larger band gap around the GaN nanowire core is a pr ...
