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Physics-based compact model for ultra-scaled FinFETs

Related concepts (33)

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MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Multigate device

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

Saturation velocity

Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

High-level synthesis

High-level synthesis (HLS), sometimes referred to as C synthesis, electronic system-level (ESL) synthesis, algorithmic synthesis, or behavioral synthesis, is an automated design process that takes an abstract behavioral specification of a digital system and finds a register-transfer level structure that realizes the given behavior. Synthesis begins with a high-level specification of the problem, where behavior is generally decoupled from low-level circuit mechanics such as clock-level timing.

Integrated circuit

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.

Verilog

Verilog, standardized as IEEE 1364, is a hardware description language (HDL) used to model electronic systems. It is most commonly used in the design and verification of digital circuits at the register-transfer level of abstraction. It is also used in the verification of analog circuits and mixed-signal circuits, as well as in the design of genetic circuits. In 2009, the Verilog standard (IEEE 1364-2005) was merged into the SystemVerilog standard, creating IEEE Standard 1800-2009.

HiSilicon

HiSilicon () is a Chinese fabless semiconductor company based in Shenzhen, Guangdong and wholly owned by Huawei. HiSilicon purchases licenses for CPU designs from ARM Holdings, including the ARM Cortex-A9 MPCore, ARM Cortex-M3, ARM Cortex-A7 MPCore, ARM Cortex-A15 MPCore, ARM Cortex-A53, ARM Cortex-A57 and also for their Mali graphics cores. HiSilicon has also purchased licenses from Vivante Corporation for their GC4000 graphics core. HiSilicon is reputed to be the largest domestic designer of integrated circuits in China.