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Electronic structure of Zn, Cu and Ni impurities in germanium

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Crystalline and correlated phases in two-dimensional transition metal dichalcogenides

Diego José Pasquier

This thesis is dedicated to the study of various aspects of the electronic structure of two-dimensional transition metal dichalcogenides (TMDs) of chemical composition MX

_2

(where M is a transition metal atom and X= S, Se, Te), using a combination of \te ...

EPFL2019

Electronic structure of Zn, Cu and Ni impurities in germanium

Graph Chatbot

Chat with Graph Search

Machine-learning the electronic density of states: electronic properties without quantum mechanics

Murunskite - a new class of functional material

Extremely large magnetoresistance in the "ordinary" metal ReO3

Learning the electronic density of states in condensed matter

Light-Induced Renormalization of the Dirac Quasiparticles in the Nodal-Line Semimetal ZrSiSe

Bulk and Surface Electronic Structure of the Dual-Topology Semimetal Pt2HgSe3

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

Crystalline and correlated phases in two-dimensional transition metal dichalcogenides

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

Learning the electronic density of states in condensed matter

Light-Induced Renormalization of the Dirac Quasiparticles in the Nodal-Line Semimetal ZrSiSe

Crystalline and correlated phases in two-dimensional transition metal dichalcogenides

Machine-learning the electronic density of states: electronic properties without quantum mechanics

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

Murunskite - a new class of functional material

Extremely large magnetoresistance in the "ordinary" metal ReO3

Bulk and Surface Electronic Structure of the Dual-Topology Semimetal Pt2HgSe3

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3