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205-GHz (Al,In)N/GaN HEMTs

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205-GHz (Al,In)N/GaN HEMTs

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A Hall sensor microsystem with integrated voltage and current references for continuous sensitivity calibration

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

Low-Noise, High-Density Microelectronics for Multi-Mode Screening of Excitable Biological Cells

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

An Energetic Based Method Leading to Merged Control Loops for the Stability of Input Filters

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

RF Performance of InAlN/GaN HFETs and MOSHFETs With f(T) X L-G up to 21 GHz . mu m

Investigations on a 1kVA Reactive Power Compensated Current Converter using monolithic RB-IGBT modules