AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates
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High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitt ...
By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal c ...
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We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transpare ...