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Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

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Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

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Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Nanoscale strain characterisation for ultimate CMOS and beyond

Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Interface issues in organic semiconductor based devices

Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors

Surface roughness in InGaAs channels of high electron mobility transistors depending on the growth temperature: Strain induced or due to alloy decomposition

Electron effective mass determination in asymmetric modulation-doped field-effect transistor heterostructures using InxGa1−xAs quantum well and InAs–GaAs superlattice channels

Cyclotron resonance in asymmetric modulation-doped field-effect transistor heterostructures using In[sub x]Ga[sub 1−x]As quantum well and InAs–GaAs superlattice channels