Effect of Uniaxial Compressive Stress on Dielectric and Piezoelectric Responses in Lead Zirconate Titanate Based Ceramics
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Composite films based on dispersions of bismuth ferrite (BiFeO3) in polyvinylidene fluoride (PVDF) matrixes were prepared in the presence of multiwalled-carbon-nanotubes (MWCNT), using xanthan gum (XG) as dispersant. Films were prepared by spin coating and ...
The results of recent studies of domain walls and their interaction with defects in BaTiO3, Pb(Zr, Ti)O-3, and BiFeO3 are discussed. The studies reveal why donor- and acceptor-doped Pb(Zr, Ti)O-3 behave differently, what is the role of stationary charged d ...
Composites in which particles of ferroelectric ceramic phase are randomly dispersed in a polymeric matrix are of interest because of flexibility, conformability, and ease of processing. However, their piezoelectric properties are rather low, unless very hi ...
The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...
Oxygen octahedra tilting is a common structural phenomenon in perovskites and has been subject of intensive studies, particularly in rhombohedral Pb(Zr,Ti)O3 (PZT). Early reports suggest that the tilted octahedra may strongly affect the domain switching be ...
A measurement setup for the detailed study of the transverse piezoelectric coefficient e(31,f) in the converse (actuator) mode was developed. It allows the assessment of the piezoelectric stress in thin films on silicon cantilevers and provides for a corre ...
Institute of Electrical and Electronics Engineers2015
The high Curie temperature (T-C similar to 825 degrees C) of BiFeO3 has made this material potentially attractive for the development of high-T-C piezoelectric ceramics. Despite significant advances in the search of new BiFeO3-based compositions, the piezo ...
Dynamics of domain walls are among the main features that control strain mechanisms in ferroic materials. Here, we demonstrate that the domain-wall-controlled piezoelectric behaviour in multiferroic BiFeO3 is distinct from that reported in classical ferroe ...
The interfaces in complex oxides present unique properties exploitable in nanoscale devices. Recent studies on ferroelectric BiFeO3, BaTiO3, and Pb(Zr, Ti) O-3 have revealed an unusually high electric conductivity of the domain walls (DWs), adding another ...
"More with less" has been the motto behind the hardware miniaturization trend in the microelectronics industry since the 1970s. Active research in the growth of oxide films, including ferroelectrics, which started soon after, followed the same trend. Meanw ...