Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
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The continuous improvements in conventional lithography methods for integrated circuit hardware allow further device shrinkage deep into the sub-micron dimensions. Two major drawbacks of these high-end patterning methods based on photoresist technologies a ...
The numerical simulation of concrete dams subject to earthquake loading requires realistic material laws which take into account material properties as effected by seismic action. Experiments under simulated seismic action were performed to examine the eff ...
The effect of high-temperature annealing on stress in AlxGa1-xN in different ambients and at different temperatures was studied using ultraviolet micro-Raman spectroscopy. Low (x=0.08) and high (x=0.31 and x=0.34) composition AlGaN, grown by metalorganic c ...
Sub-micron scale lithography methods using deep UV, X-ray or electron beams will allow for further progress in integrated circuit hardware manufacturing. The drawback of these high-end patterning methods however is firstly, the high cost of the equipment, ...
Physical properties including the equation of state, elasticity, and shear strength of pyrite have been measured by a series of X-ray diffraction in diamond-anvil cells at pressures up to 50 GPa. A Birch-Murnaghan equation of state fit to the quasi hydrost ...
One of the key problems in dental biomechanics is the prediction of tooth mobility under functional loads. Understanding tooth displacement due to load is becoming more important as new solutions in dental restorations, prosthodontics and orthodontic treat ...
The microstructural modifications due to irradiation in hcp pure metals and their consequences on the mechanical properties have been investigated. Experimental results for proton-irradiated pure polycrystalline titanium are presented and discussed. Sample ...
