Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors
Related publications (43)
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The paper presents a novel DAG-aware Boolean rewriting algorithm for restructuring combinational logic before technology mapping. The algorithm, called window rewriting, repeatedly selects small parts of the logic and replaces them with more compact implem ...
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
EPFL2019
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Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...
2018
Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...
EPFL2021
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In this work, we demonstrate high-performance NMOS GaN-based logic gates including NOT, NAND, and NOR by integration of E/D-mode GaN MOSHEMTs on silicon substrates. The load-to-driver resistance ratio was optimized in these logic gates by using a multi-fin ...
IEEE2018
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In this paper we explore the technique of “inverse gating” which is a significant improvement over the ”round gating” technique introduced in HOST 2016. Round gating worked by generating timing signals to separate glitch propagation from one circuit elemen ...
2018
In this paper we explore the technique of "inverse gating" which is a significant improvement over the "round gating" technique introduced in HOST 2016. Round gating worked by generating timing signals to separate glitch propagation from one circuit elemen ...
2018
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In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage ( VTH ), low specific on resistance ( RON,SP ) and high out ...
IEEE2019
Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...
EPFL2016
The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...
