Static random-access memoryStatic random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.
Programmable logic deviceA programmable logic device (PLD) is an electronic component used to build reconfigurable digital circuits. Unlike digital logic constructed using discrete logic gates with fixed functions, a PLD has an undefined function at the time of manufacture. Before the PLD can be used in a circuit it must be programmed to implement the desired function. Compared to fixed logic devices, programmable logic devices simplify the design of complex logic and may offer superior performance.
Programmable Array LogicProgrammable Array Logic (PAL) is a family of programmable logic device semiconductors used to implement logic functions in digital circuits introduced by Monolithic Memories, Inc. (MMI) in March 1978. MMI obtained a registered trademark on the term PAL for use in "Programmable Semiconductor Logic Circuits". The trademark is currently held by Lattice Semiconductor. PAL devices consisted of a small PROM (programmable read-only memory) core and additional output logic used to implement particular desired logic functions with few components.
Gate arrayA gate array is an approach to the design and manufacture of application-specific integrated circuits (ASICs) using a prefabricated chip with components that are later interconnected into logic devices (e.g. NAND gates, flip-flops, etc.) according to custom order by adding metal interconnect layers in the factory. It was popular during the upheaval in the semiconductor industry in the 1980s, and its usage declined by the end of the 1990s.
Memory cell (computing)The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory.
Adobe FlashAdobe Flash (formerly Macromedia Flash and FutureSplash) is a multimedia software platform used for production of animations, rich internet applications, desktop applications, mobile apps, mobile games, and embedded web browser video players. Flash displays text, vector graphics, and raster graphics to provide animations, video games, and applications. It allows streaming of audio and video, and can capture mouse, keyboard, microphone, and camera input.
Non-volatile random-access memoryNon-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data indefinitely without electric power. Read-only memory devices can be used to store system firmware in embedded systems such as an automotive ignition system control or home appliance.
Content-addressable memoryContent-addressable memory (CAM) is a special type of computer memory used in certain very-high-speed searching applications. It is also known as associative memory or associative storage and compares input search data against a table of stored data, and returns the address of matching data. CAM is frequently used in networking devices where it speeds up forwarding information base and routing table operations. This kind of associative memory is also used in cache memory.
Flash memoryFlash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.
MemristorA memristor (ˈmɛmrᵻstər; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage. It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which comprises also the resistor, capacitor and inductor. Chua and Kang later generalized the concept to memristive systems. Such a system comprises a circuit, of multiple conventional components, which mimics key properties of the ideal memristor component and is also commonly referred to as a memristor.
