Comparative Study on the Performance of Five Different Hall Effect Devices
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This paper aims to investigate the use of building performance simulation tools as a method of informing the design decision of NZEBs. The aim of this study is to evaluate the effect of a simulation-based decision aid, ZEBO, on informed decision-making usi ...
A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structu ...
Charge transport in AgI subject to an external magnetic field is studied via computer simulations. We demonstrate that a recently developed algorithm can effectively complement problematic experiments to detect the ionic Hall effect, and identify previousl ...
The Hall Effect sensors are one of the most commonly used sensing technologies today. They are employed in many applications for direct magnetic field sensing and serve a multitude of low power applications within automotive and industrial electronics as c ...
In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the auth ...
Thanks to fundamental discoveries from neuroscience, biology and others, we have achieved a deeper understanding of how we interact with our environment. It is time to bring this knowledge back to architecture: we have access to the essential ingredients o ...
In this paper the realization and optimization of two coreless open-loop bus bar current transducers based on a Hall effect sensor are presented. Two types of bus bar are evaluated: flat rectangular and rectangular with a restrictive region in the middle. ...
This work investigates a new method to measure mobility in nanowires. Based on a simple analytical approach and numerical simulations, we bring evidence that the traditional technique of Hall voltage measurement in low dimensional structures such as nanowi ...
Institute of Electrical and Electronics Engineers2014
The main characteristics of Hall Effect Sensors, based on "silicon-on-insulator" (SOI) structure in the ideal design features, are evaluated by performing three-dimensional physical simulations. A particular Hall shape reproducing an XFAB SOI XI10 integrat ...
In order to provide the information on their Hall voltage, sensitivity and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall Effect sensors has been developed. In this sense, the finite element model associated c ...