Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Depletion regionIn semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current.
TransistorA transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.
JFETThe junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between source and drain terminals.
Threshold voltageThe threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.
Strained siliconStrained silicon is a layer of silicon in which the silicon atoms are stretched beyond their normal interatomic distance. This can be accomplished by putting the layer of silicon over a substrate of silicon–germanium (). As the atoms in the silicon layer align with the atoms of the underlying silicon germanium layer (which are arranged a little farther apart, with respect to those of a bulk silicon crystal), the links between the silicon atoms become stretched - thereby leading to strained silicon.
Metal gateA metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. They used silicon as channel material and a non-self-aligned aluminum gate.
Moore's lawMoore's law is the observation that the number of transistors in an integrated circuit (IC) doubles about every two years. Moore's law is an observation and projection of a historical trend. Rather than a law of physics, it is an empirical relationship linked to gains from experience in production. The observation is named after Gordon Moore, the co-founder of Fairchild Semiconductor and Intel (and former CEO of the latter), who in 1965 posited a doubling every year in the number of components per integrated circuit, and projected this rate of growth would continue for at least another decade.
Inversion (meteorology)In meteorology, an inversion is a deviation from the normal change of an atmospheric property with altitude. It almost always refers to an inversion of the air temperature lapse rate, in which case it is called a temperature inversion. Normally, air temperature decreases with an increase in altitude, but during an inversion warmer air is held above cooler air. An inversion traps air pollution, such as smog, close to the ground. An inversion can also suppress convection by acting as a "cap".
