Depletion region | EPFL Graph Search

In semiconductor physics, the depletion region, also called depletion layer, depletion zone, junction region, space charge region or space charge layer, is an insulating region within a conductive, doped semiconductor material where the mobile charge carriers have been diffused away, or have been forced away by an electric field. The only elements left in the depletion region are ionized donor or acceptor impurities. This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region, leaving none to carry a current. Understanding the depletion region is key to explaining modern semiconductor electronics: diodes, bipolar junction transistors, field-effect transistors, and variable capacitance diodes all rely on depletion region phenomena. Formation in a p–n junction A depletion region forms instantaneously across a p–n junction. It is most easily described when the junction is in thermal equilibrium or in

Effect of the pn junction engineering on Si microwire-array solar cells

Anna Dalmau Mallorquí, Franz Michael Epple, Anna Fontcuberta i Morral

We report on the impact of the doping concentration design on the performance of silicon microwire arrays as photovoltaic devices. We have fabricated arrays with different p- and n-doping profiles and thicknesses, obtaining mean efficiencies as high as 9.7% under AM 1.5G solar illumination. The results reveal the importance of scaling the microwire diameter with the depletion width resulting from doping concentrations. The doping of the core should be kept low in order to reduce bulk recombination. Furthermore, the thickness of the n-shell should be kept as thin as possible to limit the emitter losses.

Wiley-VCH Verlag Berlin2012

Pin-by-Pin Treatment of LWR Cores with Cross Section Equivalence Procedures and Higher-Order Transport Methods

Petra Mala

This thesis presents a systematic study on the merits and limitations on using pin-by-pin resolution and transport theory based approaches for nuclear core design calculations. Starting from the lattice codes and an optimal cross section generation scheme, it compares different methods, transport approximations, and spatial discretizations used in pin-by-pin homogenized codes. It is in the interest of nuclear power plant operators to employ more heterogeneous core loadings in order to improve the fuel utilization and decrease the amount of spent fuel. This necessarily increases the requirements on the accuracy of the computation tools used for the core design and safety analysis. One possibility is employing 3D core solvers with higher spatial resolution, e.g. pin-cell wise. The comparison of several lattice codes indicates that already the proper generation of diffusion coefficients and higher-order scattering moments for pin-cell geometry is not straightforward. Out of three available lattice codes, two generated unphysical diffusion coefficient when using the inscatter approximation, while the last code was not able to provide the higher scattering moments. Several few-assembly test cases with either high neutron leakage effects or MOX/uranium interfaces showed that the quality of the results of diffusion and SP3 solvers depends critically on the choice of the diffusion coefficient: in the outscatter approximation, it can cause major deviations, while the inscatter seems overall more adequate. Regarding the transport solvers, results obtained with the SN solver DORT showed very good performance for MOX/uranium interfaces, but major deviations occurred for problems with large power gradients. On the other hand, the MOC solver nTRACER showed in all cases small average error, but 2 - 3 % error around the interface of different assemblies. A study on spatial discretization indicated that the finite difference method applied on pin-cells does not properly capture the big flux changes between MOX and uranium fuel, while the nodal expansion method is more accurate but too slow. It was suggested to use the finite difference method with finer mesh in the outer assembly pin-cells, which increases the required computation time by only 50 % and decreases the pin power errors below 1 % with respect to lattice code results. Due to some problems which were observed with the available diffusion/SP3 solvers, a new SP3 solver was implemented in the DORT-TD platform. Several core tests showed that the SP3 pin-by-pin solver can significantly outperform the state-of-the-art nodal solver SIMULATE-5, in particular for reactor cores with inserted control rods. Finally, the pin-by-pin solvers were coupled to a depletion solver. For that, an accurate and fast interpolation routine had to be implemented. The obtained results of full-cycle depletion with complex core loading showed very good performance in comparison to a heterogeneous transport-based fine-group calculations.

EPFL2018

Linear Electro-optic Effect in Silicon Nitride Waveguides Enabled by Electric-Field Poling

Camille Sophie Brès, Edgars Nitiss, Anton Stroganov, Boris Zabelich

Stoichiometric silicon nitride (Si3N4) is one of the most mature integrated photonic platforms for linear and nonlinear optical applications on-chip. However, because it is a centrosymmetric material, second-order nonlinear processes are inherently not available in Si3N4, limiting its use for multiple classical and quantum applications. In this work, we implement thermally assisted electric-field poling, which allows charge carrier separation in the waveguide core, leading to a depletion zone formation and the inscription of a strong electric field reaching 20 V/mu m. The latter results in an effective second-order susceptibility (chi((2))) inside the Si3N4 waveguide, making linear electro-optic modulation accessible on the platform for the first time. We develop a numerical model for simulating the poling process inside the waveguide and use it to calculate the diffusion coefficient and the concentration of the charge carriers responsible for the field formation. The charge carrier concentration, as well as the waveguide core size, is found to play a significant role in determining the achievable effective nonlinearity experienced by the optical mode inside the waveguide. Current findings establish a strong groundwork for further advancement of chi((2))-based devices on Si3N4.

AMER CHEMICAL SOC2022

Pin-by-Pin Treatment of LWR Cores with Cross Section Equivalence Procedures and Higher-Order Transport Methods

Petra Mala

EPFL2018