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Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...
The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...
The Model of Uptake with Instantaneous Adsorption and Efflux, MUIAE, describing and predicting the overall Cd uptake by the metal-resistant bacterium Cupriavidus metallidurans CH34, is presented. MUIAE takes into account different processes at the bacteria ...
Single-walled carbon nanotube field effect transistors (CNTFETs) are used as NH3 gas sensors and their sensing performances are studied in terms of gate biasing effect. By applying a positive gate bias, a high sensitivity of 178.5% per ppm, is achieved. Th ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
This paper presents a process for the co-fabrication of self-aligned NMOS and single electron transistors made by gated polysilicon wires. The realization of SET–MOS hybrid architectures is also reported. The proposed process exploits an original low energ ...
An original method for the extraction of FET parameters at low drain bias is presented. It is based on a simple linear charge-control model and on a power-law dependence (with an exponent k > 0 for GaAs/AlGaAs MODFET's and k < 0 for Si-MOSFET's) of the low ...
