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Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonator ...

AIP Publishing2023

Optoelectronics based on the spin-valley physics of 2D materials

Juan Francisco Gonzalez Marin

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

EPFL2022

, ,

c-plane GaN/AlN quantum dots (QDs) are promising zero-dimensional quantum nanostructures that exhibit single photon emission properties up to room temperature and even above. In this context, it is of prime interest to gain a deeper insight into the recomb ...

AMER INST PHYSICS2021

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Two-dimensional Ruddlesden−Popper hybrid lead halide perovskites have become a major topic in perovskite optoelectronics. Here, we aim to unravel the ultrafast dynamics governing the evolution of charge carriers and excitons in these materials. Using a com ...

2020

Nonequilibrium exciton physics in hybrid lead-halide perovskites and anatase titanium dioxide

Tania Palmieri

The strength of the electron-hole interaction in bulk semiconductors is not only determined by the dielectric environment, but also depends on the presence of other quasiparticles - free charge carriers or phonons - that populate the system. In the former ...

EPFL2019

This thesis is dedicated to the study of various aspects of the electronic structure of two-dimensional transition metal dichalcogenides (TMDs) of chemical composition MX

_2

(where M is a transition metal atom and X= S, Se, Te), using a combination of \te ...

EPFL2019

Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Wei Liu

Since the seminal report about the first Candela-class-brightness InGaN blue light-emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

III-nitride waveguides featuring AlInN claddings and GaN/AlGaN quantum wells (QWs) offer promising perspectives for applications in many fields of short-wavelength photonics. Thanks to their nearly lattice-matched nature, these structures exhibit an excell ...

EPFL2018

We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells grown on GaN substrate that limits nonra ...

Amer Physical Soc2016

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...

EPFL2015

This thesis is dedicated to the study of various aspects of the electronic structure of two-dimensional transition metal dichalcogenides (TMDs) of chemical composition MX

_2

(where M is a transition metal atom and X= S, Se, Te), using a combination of \te ...

EPFL2019