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Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Related publications (42)

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Exciton dynamics in a site-controlled quantum dot coupled to a photonic crystal cavity

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Pascal Gallo, Alexey Lyasota, Clément William Tendaï Jarlov

Exciton and cavity mode (CM) dynamics in site-controlled pyramidal quantum dots (QDs), integrated with linear photonic crystal membrane cavities, are investigated for a range of temperatures and photo-excitation power levels. The absence of spurious multi- ...

Amer Inst Physics2015

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells

Nicolas Grandjean

We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al, Ga) N/GaN quantum well structures by means of spatially and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum well ...

Amer Physical Soc2015

New advances in X-ray diffraction, extended X-ray absorption fine structure (EXAFS), and X-ray absorption near edge structure (XANES) using synchrotron radiation have now provided compelling evidence for a short-range charge density wave phase (CDW) called ...

Springer2015

The goal of this thesis is the combination of the high spatial resolution of scanning tunneling microscopy (STM) with the high temporal resolution of optical spectroscopy, by monitoring the light emitted from the tunnel junction. Two complementary techniqu ...

EPFL2015

InGaN alloys and heterostructures

Marlene Glauser

The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...

EPFL2014

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The crossover from an exciton gas to an electron-hole plasma is studied in a GaN/(Al,Ga)N single quantum well by means of combined time-resolved and continuous-wave photoluminescence measurements. The two-dimensional Mott transition is found to be of conti ...

2014

Biexcitonic molecules survive excitons at the Mott transition

Nicolas Grandjean, Jean-François Carlin, Benoît Marie Joseph Deveaud, Raphaël Butté, Eric Feltin, Jacques Levrat, Jean-Daniel Ganière, Gwénolé Jean Jacopin, Georg Rossbach, Mehran Shahmohammadi

When the carrier density is increased in a semiconductor, according to the predictions of Sir Nevil Mott, a transition should occur from an insulating state consisting of a gas of excitons to a conductive electron-hole plasma. This crossover, usually refer ...

Nature Publishing Group2014

Physics of Polariton Condensates in GaN-based Planar Microcavities

Jacques Levrat

Since its prediction in 1996 by Imamoğlu and coworkers, the use of a non-equilibrium polariton condensate to produce an intense coherent light source referred to as a polariton laser has attracted a lot of interest in the whole physics community as it ...

EPFL2012

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The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set ...

Amer Physical Soc2012

Organic semiconductors are promising materials for future electronic and electroluminescence applications. A detailed understanding of organic layers and nano-sized crystals down to single molecules can address fundamental questions of contacting organic s ...

EPFL2010