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Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

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Recently, single-particle cryo-electron microscopy emerged as a technique capable of determining protein structures at near-atomic resolution and resolving protein dynamics with a temporal resolution ranging from second to milliseconds. This thesis describ ...

EPFL2024

Focus: The interface between data collection and data processing in cryo-EM

Henning Paul-Julius Stahlberg

We present a new software package called Focus that interfaces cryo-transmission electron microscopy (cryo-EM) data collection with computer image processing. Focus creates a user-friendly environment to import and manage data recorded by direct electron d ...

Elsevier BV2017

A versatile atomic force microscope integrated with a scanning electron microscope

Georg Fantner

A versatile atomic force microscope (AFM), which can be installed in a scanning electron microscope (SEM), is introduced. The flexible design of the instrument enables correlated analysis for different experimental configurations, such as AFM imaging direc ...

2017

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Deriving accurate three-dimensional (3-D) structural information of materials at the nanometre level is often crucial for understanding their properties. Tomography in transmission electron microscopy (TEM) is a powerful technique that provides such inform ...

Elsevier2017

Determination of the Elastic Behavior of Silicon Nanowires within a Scanning Electron Microscope

Yusuf Leblebici, Zuhal Tasdemir

Three-point bending tests were performed on double-anchored, < 110 > silicon nanowire samples in the vacuum chamber of a scanning electron microscope ( SEM) via a micromanipulator equipped with a piezoresistive force sensor. Nanowires with widths of 35nm a ...

Hindawi Limited2016

Hardness and microstructural variation of Al-Mg-Mn-Sc-Zr alloy

Pierre Burdet

Variations of Vickers hardness were observed in Al-Mg-Mn alloy and Al-Mg-Mn-Sc-Zr alloy at different ageing times, ranging from a peak value of 81.2 HV at 54 ks down to 67.4 HV at 360 ks, below the initial hardness value, 71.8 HV at 0 ks for the case of Al ...

Pergamon-Elsevier Science Ltd2016

Three-dimensional electron imaging of dislocations from a single sample tilt

Pascal Fua, Cécile Hébert, Emad Oveisi, Antoine Letouzey

Linear crystal defects called dislocations are one of the most fascinating concepts in materials science that govern mechanical and optoelectronic properties of many materials across a broad range of application. Three-dimensional (3-D) study of dislocatio ...

Wiley2016

Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality

Nicolas Grandjean, Denis Martin

Semipolar GaN crystal stripes larger than 100 mu m with dislocation densities below 5 x 10(6) cm(-2) are achieved using a low cost fabrication process. An original sapphire patterning procedure is proposed, enabling selective growth of semipolar oriented G ...

Amer Inst Physics2016

Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

Anna Fontcuberta i Morral, Esther Alarcon Llado, Francesca Amaduzzi

importance for semiconductor nanowires because of the high surface-to-volume ratio and only little is known about the consequences of oxidation for these systems. Here, we study the properties of indium arsenide nanowires which were locally oxidized using ...

Institute of Physics2016

The mechanism for the growth of 3D ZnO nanowall networks in nest-like structure by a pulsed laser deposition (PLD) technique have been investigated for dye sensitized solar cells (DSSCs) and biosensor applications. As complex oxides shift towards large vol ...

Elsevier2015