A Conjoined Electron and Thermal Transport Study of Thermal Degradation Induced During Normal Operation of Multigate Transistors
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
AllnN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mu m gate leng ...
A measurement system has been developed to determine the resistance of integer quantum Hall plateaux relative to a room-temperature reference resistor network of nominally the same values. Silicon MOSFET and GaAs-AlGaAs samples have been successfully fabri ...
Institute of Electrical and Electronics Engineers1987
The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall pr ...
The quickening pace of the MOSFET technology scaling has pushed the MOSFET dimension towards 10 nanometer channel length, where it is going to face the following fundamental and performance limiting factors: (i) electrostatic limits, (ii) source to drain t ...
We investigate the equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon. Through the use of a first-principles approach, we map the profile of the local permittivity across two interface models showing different suboxid ...