Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
TransistorA transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.
Graphene nanoribbonGraphene nanoribbons (GNRs, also called nano-graphene ribbons or nano-graphite ribbons) are strips of graphene with width less than 100 nm. Graphene ribbons were introduced as a theoretical model by Mitsutaka Fujita and coauthors to examine the edge and nanoscale size effect in graphene. Large quantities of width-controlled GNRs can be produced via graphite nanotomy, where applying a sharp diamond knife on graphite produces graphite nanoblocks, which can then be exfoliated to produce GNRs as shown by Vikas Berry.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
SiliceneSilicene is a two-dimensional allotrope of silicon, with a hexagonal honeycomb structure similar to that of graphene. Contrary to graphene, silicene is not flat, but has a periodically buckled topology; the coupling between layers in silicene is much stronger than in multilayered graphene; and the oxidized form of silicene, 2D silica, has a very different chemical structure from graphene oxide. Although theorists had speculated about the existence and possible properties of free-standing silicene, researchers first observed silicon structures that were suggestive of silicene in 2010.
MESFETA MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate. MESFETs are constructed in compound semiconductor technologies lacking high quality surface passivation, such as gallium arsenide, indium phosphide, or silicon carbide, and are faster but more expensive than silicon-based JFETs or MOSFETs.
GrapheneGraphene (ˈgræfiːn) is an allotrope of carbon consisting of a single layer of atoms arranged in a hexagonal lattice nanostructure. The name is derived from "graphite" and the suffix -ene, reflecting the fact that the graphite allotrope of carbon contains numerous double bonds. Each atom in a graphene sheet is connected to its three nearest neighbors by σ-bonds and a delocalised π-bond, which contributes to a valence band that extends over the whole sheet.
Potential applications of graphenePotential graphene applications include lightweight, thin, and flexible electric/photonics circuits, solar cells, and various medical, chemical and industrial processes enhanced or enabled by the use of new graphene materials. In 2008, graphene produced by exfoliation was one of the most expensive materials on Earth, with a sample the area of a cross section of a human hair costing more than 1,000asofApril2008(about100,000,000/cm2). Since then, exfoliation procedures have been scaled up, and now companies sell graphene in large quantities. Ballistic conductionIn mesoscopic physics, ballistic conduction (ballistic transport) is the unimpeded flow (or transport) of charge carriers (usually electrons), or energy-carrying particles, over relatively long distances in a material. In general, the resistivity of a material exists because an electron, while moving inside a medium, is scattered by impurities, defects, thermal fluctuations of ions in a crystalline solid, or, generally, by any freely-moving atom/molecule composing a gas or liquid.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
