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Quaternary semiconductor Cu2ZnSnSe4 (CZTSe) is a very promising alternative to semiconductors based on indium (In) and gallium (Ga) as solar absorber material due to its direct band gap, inherent high absorption coefficient (> 10(4) cm(-1)) and abundance o ...
Micro-optics describes a family of elements and systems fabricated by modern micromachining. Optical structures with nearly arbitrary shapes and dimensions down to the nanometer can be realized offering a large degree of freedom for the design. The progres ...
It is commonly believed that organic molecules are physisorbed on the ideal nonpolar surfaces of wide band gap insulators with limited variation in the electronic properties of the adsorbate molecule. On the basis of first principles calculations within de ...
Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...
Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tunable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior h ...
Graphene nanoribbons (GNRs) are one-dimensional nanostructures predicted to display a rich variety of electronic behaviors. Depending on their structure, GNRs realize metallic and semiconducting electronic structures with band gaps that can be tuned across ...
The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dE(g)/dp, exhibit ...
We study the detailed temperature and composition dependence of the resistivity, rho(T), and thermopower, S(T), for a series of layered bismuth chalcogenides Bi2Te3-xSex, and report the stoichiometry dependence of the optical band gap. In the resistivity o ...
Dielectric membranes with exceptional mechanical and optical properties present one of the most promising platforms in quantum optomechanics. The performance of stressed silicon nitride nanomembranes as mechanical resonators notoriously depends on how thei ...
We compare band-edge levels as obtained with hybrid functionals and GW perturbation theory for a wide class of materials. For sp-bonded semiconductors, a close agreement is demonstrated. However, deviations for other materials are more significant and rang ...
