High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric
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Liquid metals have recently gained interest as a material of choice for soft and stretchable electronic circuits, thanks to their virtually infinite mechanical failure strain and high electrical conductivity. Gallium-based thin films are obtained by deposi ...
GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...
Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...
This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate.Fi ...
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
This paper presents the design of the ANTIGONE ASIC in AMS 0.35 mu m technology that interfaces with ion-sensitive field effect transistors (ISFETs) to detect biomarkers like pH, Na+ and K+ in human sweat. The ISFET sensors generate a low current dc signal ...
Flow cell arrays (FCAs) provide efficient on-chip liquid cooling and electrochemical power generation capabilities in three-dimensional multi-processor systems-on-chip (3DMPSoCs). When connected to power delivery networks (PDNs) of chips, the current flowi ...
We demonstrate that doping the semiconductor zinc tin oxide (ZTO) with yttrium leads to a high-voltage thin film transistor (HVTFT) with enhanced switching performance. Adding 5% yttrium leads to an increase in the on-off ratio from 40 to 1000 at an operat ...
III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...