High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band
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We present a monolithically integrated vertical coupled cavity surface-emitting laser diode which exhibits stable laser emission at two design wavelengths simultaneously. The device consists of two slightly asymmetric coupled vertical cavities containing s ...
When mixts. of O3 and mol. H2 were flashed in a laser cavity, stimulated ir emission at 3050-3410 cm-1 was detected, and the radiation was identified as the P1 transitions of the v = 3 -> 2, 2 -> 1, and 1 -> 0 fundamentals of the OH radical. Stimulated emi ...
The purpose of this paper is to present a detailed characterization of a dual-wavelength VCSEL - the BiVCSEL. This device consists of two active optical cavities, which share a coupling mirror and can be independently electrically pumped. We present the ou ...
High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 3 ...
Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatu ...
