Publication
Inkjet-printed organic transistors for the detection of gaseous analytes
Related publications (53)
Dimensional scaling of high-speed printed organic transistors enabling high-frequency operation
Printed electronics has promised to deliver low-cost, large-area and flexible electronics for mass-market applications for some time; however, so far one limiting factor has been device performance. Over the last decade, great progress has been made in ter ...
IOP PUBLISHING LTD20202-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
Nicola Marzari, Davide Campi, Cédric Klinkert
Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal di ...
AMER CHEMICAL SOC2020Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
EPFL2019Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance
Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera
In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...
2019Exploration of Negative Capacitance Devices and Technologies
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
EPFL2019On the Dynamic Performance of Laterally Gated Transistors
Elison de Nazareth Matioli, Armin Jafari, Catherine Erine, Giovanni Santoruvo
Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...
2019Detection of ultra-low protein concentrations with the simplest possible field effect transistor
Mihai Adrian Ionescu, Elizabeth Buitrago Godinez
Silicon nanowire (Si NW) sensors have attracted great attention due to their ability to provide fast, low-cost, label-free, real-time detection of chemical and biological species. Usually configured as field effect transistors (FETs), they have already dem ...
IOP PUBLISHING LTD2019Printed flexible and transparent electronics: enhancing low-temperature processed metal oxides with 0D and 1D nanomaterials
Metal oxides have broad multifunctionality and important applications to energy, sensing, and information display. Printed electronics have recently adopted metal oxides to push the limits of performance and stability for flexible thin film systems. Howeve ...
IOP PUBLISHING LTD2019Development of a monolithic near-field optomechanical system
In the same year as Einstein's annus mirabilis, English engineer and physicist John Flemming patented the first rectifying diode, which he called the "Flemming valve". Einstein's work on the photoelectric effect would change our understanding of the nature ...
EPFL2018Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O-2 plasma treatment
In this work, we analyze the effect of CF4/O-2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O-2 plasma treatment is evaluated usin ...
PERGAMON-ELSEVIER SCIENCE LTD2018