n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
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Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...
Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...
We report on the development of electrochemical etching technology for the production of multilayer porous structures |(MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy |(HVPE). The fo ...
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficiency ho ...
High-energy physics (HEP) experiments and space missions share a common challenge: thermal management in harsh environments. The severe constraints in both fields make cooling of electronic components a major design concern. This thesis aims to develop hig ...
In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...
In this thesis, we present the development and characterization of novel approaches to carrier-selective passivating contacts for crystalline silicon (c-Si) solar cells. In our first approach, we benefit from a wide-bandgap material, namely mixed-phase sil ...
The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...
This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...