Dynamic random-access memoryDynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.
Memory refreshMemory refresh is the process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory.
Semiconductor memorySemiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell.
Synchronous dynamic random-access memorySynchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an asynchronous interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a synchronous interface, whereby changes on control inputs are recognised after a rising edge of its clock input.
Standby powerStandby power, also called vampire power, vampire draw, phantom load, ghost load or leaking electricity refers to the way electric power is consumed by electronic and electrical appliances while they are switched off (but are designed to draw some power) or in standby mode. This only occurs because some devices claimed to be "switched off" on the electronic interface, but are in a different state. Switching off at the plug, or disconnecting from the power point, can solve the problem of standby power completely.
Random-access memoryRandom-access memory (RAM; ræm) is a form of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement.
C dynamic memory allocationC dynamic memory allocation refers to performing manual memory management for dynamic memory allocation in the C programming language via a group of functions in the C standard library, namely , , , and . The C++ programming language includes these functions; however, the operators and provide similar functionality and are recommended by that language's authors. Still, there are several situations in which using new/delete is not applicable, such as garbage collection code or performance-sensitive code, and a combination of malloc and placement new may be required instead of the higher-level new operator.
Row hammerRow hammer (also written as rowhammer) is a security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access. This circumvention of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times.
Memory addressIn computing, a memory address is a reference to a specific memory location used at various levels by software and hardware. Memory addresses are fixed-length sequences of digits conventionally displayed and manipulated as unsigned integers. Such numerical semantic bases itself upon features of CPU (such as the instruction pointer and incremental address registers), as well upon use of the memory like an array endorsed by various programming languages. A digital computer's main memory consists of many memory locations.
Sleep modeSleep mode (or suspend to RAM) is a low power mode for electronic devices such as computers, televisions, and remote controlled devices. These modes save significantly on electrical consumption compared to leaving a device fully on and, upon resume, allow the user to avoid having to reissue instructions or to wait for a machine to reboot. Many devices signify this power mode with a pulsed or red colored LED power light. Advanced Configuration and Power Interface In computers, entering a sleep state is roughly equivalent to "pausing" the state of the machine.
