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Concept
Memory refresh
Summary
Memory refresh is the process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random-access memory (DRAM), the most widely used type of computer memory, and in fact is the defining characteristic of this class of memory.
In a DRAM chip, each bit of memory data is stored as the presence or absence of an electric charge on a small capacitor on the chip. As time passes, the charges in the memory cells leak away, so without being refreshed the stored data would eventually be lost. To prevent this, external circuitry periodically reads each cell and rewrites it, restoring the charge on the capacitor to its original level. Each memory refresh cycle refreshes a succeeding area of memory cells, thus repeatedly refreshing all the cells in a consecutive cycle. This process is conducted automatically in the background by the memory circuitry and is transparent to the user. While a refresh cycle is occurring the memory is not available for normal read and write operations, but in modern memory this "overhead" time is not large enough to significantly slow down memory operation.
Electronic memory that does not require refreshing is available, called static random-access memory (SRAM). SRAM circuits require more area on a chip, because an SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM. As a result, data density is much lower in SRAM chips than in DRAM, and SRAM has higher price per bit. Therefore, DRAM is used for the main memory in computers, video game consoles, graphics cards and applications requiring large capacities and low cost. The need for memory refresh makes DRAM timing and circuits significantly more complicated than SRAM circuits, but the density and cost advantages of DRAM justify this complexity.
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Memory controller
The memory controller is a digital circuit that manages the flow of data going to and from the computer's main memory. A memory controller can be a separate chip or integrated into another chip, such as being placed on the same die or as an integral part of a microprocessor; in the latter case, it is usually called an integrated memory controller (IMC). A memory controller is sometimes also called a memory chip controller (MCC) or a memory controller unit (MCU).
Magnetic-core memory
Magnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975. Such memory is often just called core memory, or, informally, core. Core memory uses toroids (rings) of a hard magnetic material (usually a semi-hard ferrite) as transformer cores, where each wire threaded through the core serves as a transformer winding. Two or more wires pass through each core. Magnetic hysteresis allows each of the cores to "remember", or store a state.
Dynamic random-access memory
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.