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We investigate the dominant phonon wavevectors q* and the associated dominant phonon-assisted electronic transitions implied by the 2D Raman mode of graphene by combining ab initio calculations with a full two-dimensional integration over the graphene Bril ...
The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnos ...
Semiconductor nanowires are an emerging class of nanostructures that represent attractive building blocks for nanoscale electronic and photonic devices. To the present, nanowires are synthesized on a small scale by experimentally demanding gas phase deposi ...
The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...
In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the dielectric; this interface is crucial for transistor performance. The goal of this thesis is to study the effect of thi ...
Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurement ...
AlGaN/GaN HEMTs have been fabricated directly on (111) oriented single crystal diamond with 1.3 x 10(13) cm(-2) channel sheet charge density and 731 cm(2)/Vs mobility. 0.2 mu m gate length devices showed 0.73 A/mm maximum drain current density and f(T) and ...
The relationships between organic semiconductor morphology and device stability of organic field-effect transistors (FETs) are very complex and not yet fully understood. Especially For obtaining high-performance, air-stable n-channel FETs, gaining a deep i ...
We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy, and they are electrically contacted by a focused ion beam deposition technique. The observed pho ...
A contacting scheme to measure the transport properties into self-assembled InAs Quantum Wires (QWRs) or Quantum Dots (QDs) is presented. The nanostructures are formed on the (110) cleaved edge of a AlAs/AlGaAs heterostructure substrate by means of the Cle ...
