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Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

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Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz

Testing the Temperature Limits of GaN-Based HEMT Devices

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High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Temperature mapping of Al0.85In0.15/AlN/Gan high electron mobility transistors through micro-photoluminescence studies

The Importance of Grain Boundaries for the Time-Dependent Mobility Degradation in Organic Thin-Film Transistors

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz