Amorphous/Crystalline Silicon Interface Passivation: Ambient-Temperature Dependence and Implications for Solar Cell Performance

Silicon heterojunction (SHJ) solar cells feature amorphous silicon passivation films, which enable very high voltages. We report how such passivation increases with operating temperature for amorphous silicon stacks involving doped layers and decreases for intrinsic-layer-only passivation. We discuss the implications of this phenomenon on the solar cell's temperature coefficient, which represents an important figure-of-merit for the energy yield of devices deployed in the field. We show evidence that both open-circuit voltage (V-oc) and fill factor (FF) are affected by these variations in passivation and quantify these temperature-mediated effects, compared with those expected from standard diode equations. We confirm that devices with high V-oc values at 25 degrees C show better high-temperature performance. However, we also argue that the precise device architecture, such as the presence of charge-transport barriers, may affect the temperature-dependent device performance as well.

Modification of textured silicon wafer surface morphology for fabrication of heterojunction solar cell with open circuit voltage over 700 mV

Christophe Ballif, Stefaan De Wolf, Luc Fesquet, Aïcha Hessler-Wyser, Christian Monachon

Crystalline silicon wafer (c-Si) can be extremely well passivated by plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) films. As a result, on flat substrates, solar cells with very high open circuit voltage are readily obtained. On textured substrates however the passivation is more cumbersome, likely due to the presence of localized recombinative paths situated at the pyramid valleys. Here, we show that this issue may be resolved by selecting a silicon substrate morphology featuring large pyramids. Chemical post-texturization treatments can further reduce the surface recombination velocity. This sequence has allowed us to fabricate solar cells with open circuit voltage over 700 mV, demonstrating also on device level the effect of pyramid density and surface micro-roughness on the surface passivation quality.

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

A miniaturised autonomous sensor based on nanowire materials platform: the SiNAPS mote

Maher Kayal, Naser Khosro Pour

A micro-power energy harvesting system based on core(crystalline Si)-shell(amorphous Si) nanowire solar cells together with a nanowire-modified CMOS sensing platform have been developed to be used in a dust-sized autonomous chemical sensor node. The mote (SiNAPS) is augmented by low-power electronics for power management and sensor interfacing, on a chip area of 0.25mm(2). Direct charging of the target battery (e. g., NiMH microbattery) is achieved with end-to-end efficiencies up to 90% at AM1.5 illumination and 80% under 100 times reduced intensity. This requires matching the voltages of the photovoltaic module and the battery circumventing maximum power point tracking. Single solar cells show efficiencies up to 10% under AM1.5 illumination and open circuit voltages, Voc, of 450-500mV. To match the battery's voltage the miniaturised solar cells (similar to 1mm(2) area) are connected in series via wire bonding. The chemical sensor platform (mm 2 area) is set up to detect hydrogen gas concentration in the low ppm range and over a broad temperature range using a low power sensing interface circuit. Using Telran TZ1053 radio to send one sample measurement of both temperature and H-2 concentration every 15 seconds, the average and active power consumption for the SiNAPS mote are less than 350nW and 2.1 mu W respectively. Low-power miniaturised chemical sensors of liquid analytes through microfluidic delivery to silicon nanowires are also presented. These components demonstrate the potential of further miniaturization and application of sensor nodes beyond the typical physical sensors, and are enabled by the nanowire materials platform.

Spie-Int Soc Optical Engineering2013

Contact Design for Silicon Heterojunction Solar Cells

Luca Massimiliano Antognini

Today more than ever the world needs clean energy sources and thus a fast deployment and scaling up of the photovoltaic industry. In this context improving solar cell efficiency plays a major role. In order to achieve the maximum single junction efficiency for this material, technologies featuring carrier selective passivating contacts are foreseen to be the next successors of actual industrial cells. Among them, the silicon heterojunction (SHJ) solar cell is a promising technology which demonstrated efficiencies up to 26.7%. Its main specificity consists in the use of intrinsic and doped amorphous silicon (a-Si:H) to provide surface passivation and carrier selectivity to the c-Si, which allows to reach very high operating voltages in comparison to other c-Si based technology. The major drawbacks of SHJ solar cell is the large parasitic absorption occurring in those layers. To address this challenge, a strong focus on alternative non-silicon based thin films with wider band gap has built up in the literature. A first part of this thesis focuses on reviewing the fundamental process behind carrier selectivity and discuss the ability of different models from the literature to draw informations directly from the peculiar shapes of IV curves commonly observed in the solar cells featuring newly developed materials. We first discuss the simple four ideal diodes model of Roe et al to explain the occurrence of S-shapes depending on the contact quality. We discuss from a theoretical point of view how to improve the model by modifying the ideal diodes by other circuit elements as well as adding bulk recombinations. We test the theory experimentally and identified modifications that should be incorporated in the model.In a second part of the thesis, we explore the development of doped nano-crystalline silicon (nc-Si) layers to replace classical amorphous silicon layers. We investigate the influence of TMB and BF3 as dopant sources on the transparency and contact properties of nc-Si:H(p) layers as well as their integration in solar cells. We expose the roles of both gas to modify the crystallinity of the layer and find different optimum for both of them to lead high efficiencies, illustrated by a certified 23.9%-efficient solar cell. We report also on further optimization steps of this front junction architecture resulting in certified efficiency of 24.44%.We explore next the n-type nc-Si layers for application as window layer. In particular, we perform thickness and doping series to unravel the layer properties along its growth direction. In order to improve the low doping of the nucleation zone of nc-Si:H(n) at the i/n interface, a thin a-Si:H(n) buffer layer is introduced and shown to improve the passivation, selectivity and contact resistivity. Finally, we also report on the beneficial effect of an additional SiOx capping layer which improves both the reflection properties as well as all contact properties, broadening the optimal parameter window. The absorption loss in the front silicon layers remains however the highest share of losses, and therefore we explore theoretically the opportunity of using thinner front side layers or using thin TCO / silicon nitride bilayers to reduce the absorption losses. We finish the discussion by presenting an optimization roadmap, showing a possibility for double-side contacted SHJ cells to reach efficiencies above 26% without requiring any patterning or localization step.

EPFL2022

Contact Design for Silicon Heterojunction Solar Cells

Luca Massimiliano Antognini

EPFL2022