Modeling Minority Carriers Related Capacitive Effects for Transient Substrate Currents in Smart Power ICs
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
In a semiconductor market dominated by portable consumer applications, embedded flash memory technology has experienced a rapid diffusion. It is now considered the preferred solid-state memory solution for its non-volatile characteristics, high read and wr ...
With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...
Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental ...
The electronics industry is present nowadays in the most various applications. A new type of technology for integrated circuits named BCD has started to be developed and appeared from the mid 1980’s. This new technology allows integrating bipolar transisto ...
This article explores the main tradeoffs in design of power and area efficient bandgap voltage reference (BGR) circuits. A structural design methodology for optimizing the silicon area and power dissipation of CMOS BGRs will be introduced. For this purpose ...
Technology scaling improves the energy, performance, and area of the digital circuits. With further scaling into sub-45nm regime, we are moving toward very low supply (VDD) and threshold voltages (VT), smaller VDD/VT ratio, high leakage current, and large ...
The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...
We have developed a closed-form solution for trans-capacitances in long-channel Junctionless Double Gate MOSFET. This approach, which is derived from a coherent charge-based model, was fully validated with Technology Computer Aided Design simulations. Acco ...
Institute of Electrical and Electronics Engineers2013
In view of the Large Hadrons Collider experiments upgrade, where the inner front-end electronics will require higher supply power, a new power distribution scheme has to be designed. This thesis presents a new and more efficient scheme based on step-down D ...
This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...
