Room-Temperature Ballistic Transport in III-Nitride Heterostructures
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Cyclotron resonance and photoluminescence measurements have been performed on two types of modulation-doped field-effect transistor heterostructures having their bidimensional channel based, respectively, on an InxGa1-xAs quantum well and an InAs-GaAs shor ...
In highly excited semiconductor systems near the transition from direct to indirect band structure (cross-over) the energetic distance between different conduction band minima is a nonmonotonous function of the excitation intensity. A theoretical explanati ...
Low-frequency noise measurements have been performed in the linear range of the I-V characteristics of pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As/GaAs high electron mobility transistors (HEMTs) grown by molecular beam epitaxy with different channel thicknes ...
Cyclotron resonance and photoluminescence measurements were carried out on two types of modulation-doped field-effect transistor heterostructures whose channels were made of an InAs-GaAs short-period superlattice and of an InxGa1-xAs quantum well, respecti ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
We propose a method for the quantitative evaluation of electron-beam-induced current profiles measured in normal-collector geometry across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures. We obtain a theoretical expression, valid for all distances from ...
P doping of gallium nitride by incorporation of magnesium in the layers was controlled recently. Only Popovici et al. [1] have published the results of a Raman study on p type GaN. In the present communication, we report on the interaction of the free hole ...