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Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of th ...
A method of obtaining a relative calibration of Si photodiodes for the spectral range of soft x rays (1-30 KeV) is presented. A simple mathematical model of the p-n diode is adopted which allows the response to be described in terms of a small set of param ...
We report the fabrication and characterization of lateral metal-semiconductor-metal (MSM) photodiodes on an InP substrate. The photoabsorbing layer is made of InGaAs covered by a thin InP Schottky barrier enhancement layer. Schottky contacts for the detect ...
