Theoretical Models for the Action Spectrum and the Current-Voltage Characteristics of Microporous Semiconductor Films in Photoelectrochemical Cells
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
A process and device are disclosed for purifying liquids, in particular water, contaminated with inorganic and/or organic impurities. The impurities are transformed and/or precipitated through the use of the catalytic and photocatalytic properties of semic ...
An efficient, electrically conductive, chemical barrier for the integration of piezoelectric Pb(Zr,Ti)O3 (PZT) films on reactive metal substrates has been developed, opening new possibilities for PZT integration on micromechanical and semiconductor devices ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...
We have modified the Schottky-barrer height of Si overlayers on Ag(111) substrates by means of Cs intralayers of different thicknesses. We also found a correlation between these changes and those of the work function, which makes it possible to measure the ...
The heat pretreatment of Ni at 500-700 Deg gives a nonstoichiometric Ni oxide which shows metallic cond. and low activity for O evolution; at higher temps. (>700 Deg), a nonconducting NiO (p-type semiconductor) is formed. [on SciFinder (R)] ...
The main fields of applications are today especially broadcast amplifiers and fast power-supplies for plasma physics or neutral Beam Injection. The fisrst interests on the proposed technique is the series connected step inverter stages, which represents a ...
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge disconti ...
The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the ...
It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors. The pseudomorphic growth regime of InAs on GaAs(001) is extended from 1.5 to 6 monolayers by the use of Te as surfactant. This delaye ...