Publication

DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS

Nicolas Grandjean
1992
Journal paper

Abstract

It is demonstrated that the concept of surfactant applies to the epitaxial growth of highly strained III-V semiconductors. The pseudomorphic growth regime of InAs on GaAs(001) is extended from 1.5 to 6 monolayers by the use of Te as surfactant. This delayed plastic relaxation of the strain is correlated with the modification of the growth mode via surface energy minimization.

Official source

https://infoscience.epfl.ch/record/152571?ln=en

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DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V SEMICONDUCTOR EPITAXIAL LAYERS

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