Electronic properties of transition-metal dichalcogenides
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The magneto-luminescence of GaN/AlGaN quantum wells in fields up to 52 T shows a field dependence that is strongly dependent on the well width. Strong redshifts are seen for the narrowest wells that are attributed to a Zeeman splitting. This is unexpected, ...
A set of parameters for the temperature dependence of the direct band gap of InP has been determined by fitting the excitonic recombination energy in the photoluminescence (PL) spectra between 2 and 250 K. We have used high-quality InP samples grown by che ...
Valence- and conduction-band offsets can be induced at GaAs(100) polar homojunctions by means of ultrathin Si intralayers. The microscopic interface dipole responsible for the creation of such offsets can be varied by changing the Si intralayer thickness; ...
Electronic states bound to impurities located in the quantum well barriers are calculated when the bulk binding energy is comparable to the quantum well depth. We show the existence of a complex level pattern due to the interaction between barrierlike stat ...
A reordered valence band in GaN/AlxGa1-xN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g factor (g*similar to3) in magnetoluminescence spectra in fields up to 55 T. This has been caused by a rever ...
We investigated the electronic structure of epitaxially grown silver films on Cu(111) with and without adsorption of cesium by means of scanning tunneling spectroscopy and two-photon photoemission. This system has been chosen as a model system to engineer ...
We use the Kelvin method to study the synchrotron radiation induced surface photovoltage (SPV) on GaAs(110) as a function of metal coverage and temperature. We find that varying the temperature alone does not induce significant change in band bending in th ...
We studied the newly synthesized quasi-one-dimensional compound Nb4Te17I4. Resistivity measurements confirmed its pseudo-one-dimensional character and photoemission spectroscopy clarified the nature of its valence band states. This polytelluride is a narro ...
Contact potential difference measurements of synchrotron radiation-induced surface photovoltage (SPV) are performed on GaAs(110) as a function of metal coverage and temperature. On low doped n-samples, the low temperature SPV (0.55 eV) is almost equal to t ...
We studied the Bi/InP(110) interface for 0.35- and 0.9-monolayer (ML) Bi coverages by photoemission extended x-ray absorption fine-structure (PEXAFS). P 2p PEXAFS data were acquired. The data were analyzed by Fourier filtering followed by phase analysis us ...