Mole fractionIn chemistry, the mole fraction or molar fraction (xi or χi) is defined as unit of the amount of a constituent (expressed in moles), ni, divided by the total amount of all constituents in a mixture (also expressed in moles), ntot. This expression is given below: The sum of all the mole fractions is equal to 1: The same concept expressed with a denominator of 100 is the mole percent, molar percentage or molar proportion (mol%). The mole fraction is also called the amount fraction.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Free electron modelIn solid-state physics, the free electron model is a quantum mechanical model for the behaviour of charge carriers in a metallic solid. It was developed in 1927, principally by Arnold Sommerfeld, who combined the classical Drude model with quantum mechanical Fermi–Dirac statistics and hence it is also known as the Drude–Sommerfeld model.
Surface roughnessSurface roughness can be regarded as the quality of a surface of not being smooth and it is hence linked to human (haptic) perception of the surface texture. From a mathematical perspective it is related to the spatial variability structure of surfaces, and inherently it is a multiscale property. It has different interpretations and definitions depending from the disciplines considered. Surface roughness, often shortened to roughness, is a component of surface finish (surface texture).
Gallium arsenideGallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others.
Molar concentrationMolar concentration (also called molarity, amount concentration or substance concentration) is a measure of the concentration of a chemical species, in particular of a solute in a solution, in terms of amount of substance per unit volume of solution. In chemistry, the most commonly used unit for molarity is the number of moles per liter, having the unit symbol mol/L or mol/dm3 in SI unit. A solution with a concentration of 1 mol/L is said to be 1 molar, commonly designated as 1 M.
Fermi gasA Fermi gas is an idealized model, an ensemble of many non-interacting fermions. Fermions are particles that obey Fermi–Dirac statistics, like electrons, protons, and neutrons, and, in general, particles with half-integer spin. These statistics determine the energy distribution of fermions in a Fermi gas in thermal equilibrium, and is characterized by their number density, temperature, and the set of available energy states. The model is named after the Italian physicist Enrico Fermi.
Ultimate tensile strengthUltimate tensile strength (also called UTS, tensile strength, TS, ultimate strength or in notation) is the maximum stress that a material can withstand while being stretched or pulled before breaking. In brittle materials the ultimate tensile strength is close to the yield point, whereas in ductile materials the ultimate tensile strength can be higher. The ultimate tensile strength is usually found by performing a tensile test and recording the engineering stress versus strain.
JFETThe junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between source and drain terminals.
Multigate deviceA multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
