Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/ln
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Lattice-matched ZnSe/InxGa1-xAs heterostructures were fabricated by molecular beam epitaxy on GaAs(001)2x4 surfaces. We find that the partial character of the strain relaxation within the ternary layer can be compensated by a suitable excess in the In conc ...
Scanning tunneling microscopy (STM) is used in situ to study threading dislocation terminations at the surface of GaN grown by molecular beam epitaxy on a Si(111) surface. The associated surface depressions are imaged at the nanometer scale, giving a new i ...
We have realized a micromechanical cantilever magnetometer with an integrated two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructuregrown by molecular-beam epitaxy(MBE). The cantilever was defined by lithography and wet-etched selectively ...
GaInN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The growth of Ga1-xInxN (x > 12%) alloy has been extensively studied. At low V/III ratio, the growth undergoes a Stranski-Krastanov transition giving ...
The transformation from pseudomorphic to dislocated and back to pseudomorphic growth with increasing coverage is reported for molecular beam epitaxy of Ag on Pt(111). Below a critical size of 200 Angstrom two-dimensional Ag islands grow coherently strained ...
The Zn/Se flux ratio employed during the early stages of molecular beam epitaxy of pseudomorphic ZnSe/GaAs(001) as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures controls the density of the native stacking faults, which have been associa ...
Low-frequency noise measurements have been performed in the linear range of the I-V characteristics of pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As/GaAs high electron mobility transistors (HEMTs) grown by molecular beam epitaxy with different channel thicknes ...
In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflectio ...
We have investigated by TEM InAlAs/InGa1-xAs/InP heterostructures grown by Molecular Beam Epitaxy. Our interest has been focused on the effects of the growth temperature tin the range T-g=470 degrees C-->530 degrees C), well composition (x(In)=53%-->80%) a ...
This work discusses the near edge photoluminescence and reflectivity of GaN layers grown on sapphire using three different methods. Particular emphasis is given to the importance of strain effects on intrinsic properties, as obtained from reflectivity, and ...
