Publication
We present a comparative study, at 300 K and at low longitudinal field, of the DC characteristics and the low-frequency noise in the drain current of GaAs/AlGaAs MODFETs which, ideally, differ only by the doping mode of the AlGaAs layer. The higher 1/f-like noise in the δ-doped structure is consistent with our previous suggestion that charge fluctuations under the gate contribute significantly to the 1/f-like noise. This work further indicates that the charge centers are related to the Si dopants under the gate.
Mihai Adrian Ionescu, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri, Luca Selmi
Luc Thévenaz, Malak Mohamed Hossameldeen Omar Mohamed Galal, Yuting Yang, Li Zhang, Suneetha Sebastian