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The increase of the complexity in semiconductor structures raises more and more the need for local evaluation techniques. For example, laser structures with graded-index waveguides are now widespread, but the characterisation of the shape of the gradient i ...
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge disconti ...
This thesis addresses general aspects of the operation of a coupled-cavity vertical surface-emitting laser (CC-VCSEL) which consists of two active cavities optically coupled and independently electrically pumped. The first two chapters of the thesis deal w ...
Photoelectric conversion device (1) comprising semiconductor electrode (15) having semiconductor layer (7) carrying a sensitizing dye, counter electrode (9) arranged opposite to the semiconductor electrode (15) and electrolyte layer (13) arranged between t ...
An optically-active multi-layer dielectric structure comprises an optically active zone between two mirrors forming a Fabry-Perot microcavity. The optically active zone comprises an optically active material of wavelength lambda centred in a layer of high ...
A vertical-cavity surface-emitting laser with two monolithically grown cavities is presented, The three-terminal device allows current injection into the active regions of both cavities, Under various injection conditions, the device lases continuous wave ...
We have studied the capabilities of chemical beam epitaxy (CBE) to produce high-gain media for long-wavelength (1.5 mu m) vertical cavity surface emitting lasers (VCSELs). Using a parameter pair of low growth temperature and small V/III ratio the integrati ...
The invention concerns a method for making a suspended microstructure comprising the following steps: forming a masking layer on a substrate top surface; structuring the masking layer to form at least an opening substantially defining the surface of said m ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...
High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 3 ...