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Photoelectric conversion device (1) comprising semiconductor electrode (15) having semiconductor layer (7) carrying a sensitizing dye, counter electrode (9) arranged opposite to the semiconductor electrode (15) and electrolyte layer (13) arranged between t ...
This thesis addresses general aspects of the operation of a coupled-cavity vertical surface-emitting laser (CC-VCSEL) which consists of two active cavities optically coupled and independently electrically pumped. The first two chapters of the thesis deal w ...
A vertical-cavity surface-emitting laser with two monolithically grown cavities is presented, The three-terminal device allows current injection into the active regions of both cavities, Under various injection conditions, the device lases continuous wave ...
High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 3 ...
The increase of the complexity in semiconductor structures raises more and more the need for local evaluation techniques. For example, laser structures with graded-index waveguides are now widespread, but the characterisation of the shape of the gradient i ...
The broad tunability (1-10 mum) and megawatt regime peak intensity available from the Vanderbilt Free-Electron Laser is opening new avenues in semiconductor research. Initial experiments in nonlinear optical absorption and heterojunction band-edge disconti ...
An optically-active multi-layer dielectric structure comprises an optically active zone between two mirrors forming a Fabry-Perot microcavity. The optically active zone comprises an optically active material of wavelength lambda centred in a layer of high ...
The invention concerns a method for making a suspended microstructure comprising the following steps: forming a masking layer on a substrate top surface; structuring the masking layer to form at least an opening substantially defining the surface of said m ...
We have studied the capabilities of chemical beam epitaxy (CBE) to produce high-gain media for long-wavelength (1.5 mu m) vertical cavity surface emitting lasers (VCSELs). Using a parameter pair of low growth temperature and small V/III ratio the integrati ...
During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonl ...