Excitonic Diffusion in InGaN/GaN Core–Shell Nanowires
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...
Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...
We report on the observation of multiple polariton modes, originating from an electronic coupling between quantum wells inside a planar microcavity. A series of excitonic transitions are measured for a bare quantum well stack and are precisely identified t ...
This paper evaluates the potential for automated lighting control as a resource for frequency regulation of the electric grid system in the context of current energy policies, economic incentives, and technological trends. The growing prevalence of renewab ...
Over the past decade, a growing interest appeared for III-nitride semiconductors, in view of their potential applications in intersubband (ISB) devices. If these materials are nowadays famous, particularly for having revolutionized domestic lighting thanks ...
Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...
Spurred on by the invention of the blue light-emitting diode ( LED) a quarter of a century ago, the LED industry has advanced dramatically and has revolutionized the signaling/signage, mobile and flat panel display, and more recently, general lighting mark ...
The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...
Turn-on time is a key factor for lighting devices to be of practical application. To decrease the turn-on time value of a deep-red light-emitting electrochemical cells (DR-LECs), two novel approaches based on molecularly engineered ruthenium phenanthroimid ...
Core/shell InGaN/GaN nanowire light emitting diodes (LEDs) based on vertically standing single nanowires and nanowire arrays were fabricated and extensively characterized. The emission of single wire LEDs with the same conformal contact geometry as the arr ...