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We have focused on the ability to tune the aluminum (Al) content of the AlGaAs alloy along the growth direction in inverted pyramids (by MOVPE), thus tailoring the potential along a QWR nanostructure. Three parabolic-potential QDs (PQDs) of different poten ...
The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...
Method for processing a circular light field comprising the step of receiving or storing a circular light field matrix, wherein the circular light field matrix comprises pixel data for different circumferential angles and for different incidence angles, wh ...
Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...
In this work, the authors describe a novel route to achieve a high reflectivity, wide bandwidth feedback mirror for GaN-based vertical-cavity light emitters; using air-suspended high contrast gratings in TiO2, with SiO2 as a sacrificial layer. The TiO2 fil ...
Spurred on by the invention of the blue light-emitting diode ( LED) a quarter of a century ago, the LED industry has advanced dramatically and has revolutionized the signaling/signage, mobile and flat panel display, and more recently, general lighting mark ...
Blue III-nitride light-emitting diodes (LEDs) are widely used nowadays in solid-state lighting, as white light can be produced by combining yellow phosphors and blue LEDs. This technology has the advantage to have a higher luminous efficiency than incandes ...
We report a full optical deep sub-wavelength imaging of the vectorial components of the electric local density of states for the confined modes of a modified GaN L3 photonic crystal nanocavity. The mode mapping is obtained with a scanning near-field optica ...
Light-Emitting Electrochemical Cells (LECs) with a simple device structure ITO/Ru complex/Ga: In were prepared by using heteroleptic ruthenium(II) complexes containing 2-(2-hydroxyphenyl)-1(4-bromophenyl)-1h-imidazo[4,5-f][1,10] phenanthroline (hpbpip) as ...
Recent developments have enabled the practical realization of optical elements in which the polarization of light may vary spatially. We present an extension of Fourier optics-matrix Fourier optics-for understanding these devices and apply it to the design ...
