Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes
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Ca as an unintentional impurity has been investigated in III-nitride layers grown by molecular beam epitaxy (MBE). It is found that Ca originates from the substrate surface, even if careful cleaning and rinsing procedures are applied. The initial Ca surfac ...
Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of ...
The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...
Nowadays, light emitting diodes (LEDs) and laser diodes (LDs) are part of our daily life. More and more devices incorporate InGaN-based optoelectronic devices. In fact, since the first demonstration of a candela-class InGaN-based LED in the beginning of th ...
This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs). ...
The objective of the Green Lighting project was to develop a High Performance Integrated Lighting System, based on advanced technologies for day- and electric lighting, achieving a Lighting Power Density (LPD) that does not exceed 3 W/m2. The project has r ...
An experimental method is demonstrated for the determination of internal quantum efficiency (IQE) in III-nitride-based light-emitting diodes (LEDs). LED devices surrounded with an optically absorbing material have been fabricated to limit collected light t ...
Recent improvements in light-emitting diode (LED) technology has allowed for the use of LEDs for solar simulators with excellent characteristics. In this paper, we present a solar simulator prototype fully based on LEDs. Our prototype has been designed spe ...
Using pulsed electroluminescence detected magnetic resonance (PELDMR), we study the dynamics of spin processes in Alq(3) based light-emitting diodes. The transitions induced by magnetic resonance are found to be much faster than the space charge reaction t ...
Light-emitting diodes are becoming the alternative for future general lighting applications, with huge energy savings compared to conventional light sources owing to their high efficiency and reliability. Polarized light sources would largely enhance the e ...