High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
Field-effect transistorThe field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
Quantum wellA quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and holes), leading to energy levels called "energy subbands", i.e.
Electron-beam physical vapor depositionElectron-beam physical vapor deposition, or EBPVD, is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous phase. These atoms then precipitate into solid form, coating everything in the vacuum chamber (within line of sight) with a thin layer of the anode material.
Vacuum depositionVacuum deposition , also known as vacuum coating or thin-film deposition, is a group of processes used to deposit layers of material atom-by-atom or molecule-by-molecule on a solid surface. These processes operate at pressures well below atmospheric pressure (i.e., vacuum). The deposited layers can range from a thickness of one atom up to millimeters, forming freestanding structures. Multiple layers of different materials can be used, for example to form optical coatings.
ExcitonAn exciton is a bound state of an electron and an electron hole which are attracted to each other by the electrostatic Coulomb force. It is an electrically neutral quasiparticle that exists in insulators, semiconductors and some liquids. The exciton is regarded as an elementary excitation of condensed matter that can transport energy without transporting net electric charge. An exciton can form when a material absorbs a photon of higher energy than its bandgap. This excites an electron from the valence band into the conduction band.
Surface statesSurface states are electronic states found at the surface of materials. They are formed due to the sharp transition from solid material that ends with a surface and are found only at the atom layers closest to the surface. The termination of a material with a surface leads to a change of the electronic band structure from the bulk material to the vacuum. In the weakened potential at the surface, new electronic states can be formed, so called surface states.
MonolayerA monolayer is a single, closely packed layer of atoms, molecules, or cells. In some cases it is referred to as a self-assembled monolayer. Monolayers of layered crystals like graphene and molybdenum disulfide are generally called 2D materials. A Langmuir monolayer or insoluble monolayer is a one-molecule thick layer of an insoluble organic material spread onto an aqueous subphase in a Langmuir-Blodgett trough. Traditional compounds used to prepare Langmuir monolayers are amphiphilic materials that possess a hydrophilic headgroup and a hydrophobic tail.
Invention of the integrated circuitThe first planar monolithic integrated circuit (IC) chip was demonstrated in 1960. The idea of integrating electronic circuits into a single device was born when the German physicist and engineer Werner Jacobi developed and patented the first known integrated transistor amplifier in 1949 and the British radio engineer Geoffrey Dummer proposed to integrate a variety of standard electronic components in a monolithic semiconductor crystal in 1952. A year later, Harwick Johnson filed a patent for a prototype IC.
SapphireSapphire is a precious gemstone, a variety of the mineral corundum, consisting of aluminium oxide () with trace amounts of elements such as iron, titanium, cobalt, lead, chromium, vanadium, magnesium, boron, and silicon. The name sapphire is derived via the Latin from the Greek sappheiros (), which referred to lapis lazuli. It is typically blue, but natural "fancy" sapphires also occur in yellow, purple, orange, and green colors; "parti sapphires" show two or more colors.
