Characterization and Optimization of Silicon Nitride Thin Films
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The rational synthesis of novel materials requires the control over the arrangement of matter in order to meet the desired properties for applications and devices. Ultimately, control means to define the place of each atom and determine its chemical state, ...
The interplay of gas flow and depletion by plasma dissociation determines the spatial distribution of species and the deposition uniformity in a plasma source. Many plasma reactors use a gas showerhead and the design of the flow dynamics is a critical aspe ...
Oxynitride thin films, a novel class of mixed anionic solid structures, have gained an intense interest during recent years related to the unique interplay of oxygen (O) and nitrogen (N) with metals in the material structure. This matter can result in spec ...
Nowadays thin films play an important role in everyday life and in industries. Thin film technology has been developed primarily for the growing demand for development of smaller and smaller devices that require advanced materials and new processing techni ...
Aluminum rich oxynitride thin films were prepared using pulsed direct current (DC) magnetron sputtering from an Al95.5Cr2.5Si2 (at.%) target. Two series of films were deposited at 400 degrees C and 650 degrees C by changing the O-2/(O-2 + N-2) ratio in the ...
2010
We investigated the variation of N:P and N:K ratio in ombrotrophic Sphagnum plants along a gradient of atmospheric N deposition from 1 to 2.5 g m(-2) year(-1) in Central-East Europe. The N:P and N:K ratio in Sphagnum capitula increased significantly along ...
Doped silicon nanowires (NWs) were epitaxially grown on silicon substrates by pulsed laser deposition following a vapour-liquid-solid process, in which dopants together with silicon atoms were introduced into the gas phase by laser ablation of lightly and ...