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Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thin-film silicon solar cells. This paper presents a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below th ...
Due to their high hardness, high melting point and high chemical stability, transition metal nitrides present a great interest for various applications. This work constitutes a contribution to the understanding of the properties of Nb based binary and tern ...
In the following, we report investigations of the dependencies of the structural, optical and electrical characteristics of InN thin films grown by MOCVD on the growth temperature. The layer thicknesses range from 70 to 400 nm. Their carrier concentrations ...
Titanium dioxide (TiO2) is a widely investigated material for its biological compatibility, high dielectric constant and refractive index, chemical and mechanical resistance, and catalytic activity. Several different techniques are available to produce TiO ...
Titanium aluminium nitride (TiAlN)-based coatings are designed specially for applications where oxidation and wear resistance are primary demands, as in the case of cutting tools. Moreover the coatings are required to be thermally stable as well as have go ...
Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substr ...
Uniaxial fragmentation tests were carried out in situ in a scanning electron microscope (SEM) on 10-nm-thick silicon oxide coatings deposited by plasma enhanced chemical vapor deposition on poly(ethylene terephthalate). In order to prevent charging effects ...
Polymeric precursor solution (Pechini method) was used to deposit LiNbO3 thin films by spin-coating on (100) silicon substrates. X-ray diffraction data of thin films showed that the increase of oxygen flow promotes a preferred orientation of (001) LiNbO3 p ...
Microcrystalline hydrogenated silicon films (muc-Si:H) have been deposited by a high current DC plasma in argon-silane-hydrogen mixtures at growth rates up to 10 nm/s and at substrate temperatures below 500 degreesC. Scanning electron microscopy, X-ray dif ...
A combined PVD/PECVD process for the vacuum deposition of titaniumcontainingamorphoushydrogenatedcarbonfilms is described. Elemental compositions of the deposited films have been determined by in situ core level photoelectron spectroscopy (XPS). The long-t ...
