High-quality Synthetic 2D Transition Metal Dichalcogenide Semiconductors
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The growth dynamics of oxygen assisted focused electron beam induced deposition of Si-containing materials (from SiOxCy to SiO2) were investigated as a function of relevant process parameters. The results obtained from organosilanes of different families ( ...
We report the observation of a characteristic incubation time in the growth of silicon nanowires using the vapor-liquid-solid growth mechanism. This incubation time manifests itself during the growth process as a characteristic time delay in the range of s ...
Strontium barium niobate (SrxBa1-xNb2O6, shortly SBN) is a solid solution system with tetragonal tungsten bronze crystal structure. It exhibits a ferroelectric phase with only one polar axis and a transition temperature depending on the Sr/Ba ratio. This t ...
Titanium dioxide (TiO2) is a widely investigated material for its biological compatibility, high dielectric constant and refractive index, chemical and mechanical resistance, and catalytic activity. Several different techniques are available to produce TiO ...
Thin silicon oxide (SiOx) barrier coatings formed by plasma enhanced chemical vapor deposition on poly(ethylene terephthalate) (PET) substrates were subjected to post-deposition annealing treatments in the temperature range for orientation relaxation of th ...
Light Induced Chemical Vapour Deposition (LICVD) of titanium dioxide thin films is studied in this work. It is shown that this technique enables to deposit locally and selectively a chosen crystalline phase with a precise controlled thickness at low substr ...
Recently, some research effort has been instigated towards micro and nano patterning of curved surfaces, as system miniaturization by means of patterned planar surfaces has practically reached its limits. In contrast to the more practical approach of exist ...
We report on a study of pentacene thin-films grown by high vacuum deposition on silicon dioxide, using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The nucleation density of pentacene islands on SiO2is found to rise ...
The anodic oxidn. of H2SO4 to H2S2O8 was investigated on B-doped synthetic diamond electrodes obtained by hot filament chem. vapor deposition. High current efficiency for H2S2O8 formation can be achieved in concd. H2SO4 (7.5 mol dm-3) and using high curren ...
We report the observation of a characteristic incubation time in the growth of silicon nanowires using the vapor-liquid-solid growth mechanism. This incubation time manifests itself during the growth process as a characteristic time delay in the range of s ...
