Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures
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Scanning tunneling microscopy (STM) is used in situ to study threading dislocation terminations at the surface of GaN grown by molecular beam epitaxy on a Si(111) surface. The associated surface depressions are imaged at the nanometer scale, giving a new i ...
A dual-axis, raster-scanning laser display based on a monolithic micromachined scanner is presented. The scanner consists of a mirror located at the end of a thermally actuated bimorph beam. The novelty of the device is that the two orthogonal angular moti ...
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