Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures
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A novel C-Nafton/Fe-ion structured fabric capable of mediating Orange II decomposition in Fenton-immobilized photoassisted reactions is presented. The catalyst preparation requires the right balance between the amount of the Nafion necessary to protect the ...
Scanning electrochemical microscopy (SECM) was used to characterize addressable microelectrode arrays patterned with 25 regularly spaced (100 μm center to center) 10 μm diameter platinum microdisks. Both the feedback mode and the substrate generation/tip c ...
Wetting and sticking of soda-lime glass on two types of stainless steel as well as on platinum and vitreous carbon substrates are studied in a neutral gas atmosphere between 860 and 1200degreesC. Wetting is measured by the "transferred drop" version of the ...
Many atomic diffusion processes occur at rates that are too fast to observe experimentally. Using video scanning tunnelling microscopy, researchers are now able to observe the individual steps involved in correlated transport of atomic strings on metal sur ...
A transmission electron microscopy study of a wide range of p-type GaN samples reveals that high Mg doping has a strong influence on the polarity of GaN. The main characteristic of Mg-doped metal organic vapour phase epitaxy (MOVPE) and bulk GaN is the pre ...
A dual-axis, raster-scanning laser display based on a monolithic micromachined scanner is presented. The scanner consists of a mirror located at the end of a thermally actuated bimorph beam. The novelty of the device is that the two orthogonal angular moti ...
The atomic force microscopy in ultrahigh vacuum and at low temperature demonstrated its excellent capability to reach atomic resolution. Nevertheless in the case of biological samples high resolution has been achieved only in very few cases. We demonstrate ...
Scanning tunneling microscopy (STM) is used in situ to study threading dislocation terminations at the surface of GaN grown by molecular beam epitaxy on a Si(111) surface. The associated surface depressions are imaged at the nanometer scale, giving a new i ...
Al0.1Ga0.9N(5nm)/GaN(2nm) and In0.2Ga0.8N/GaN quantum wells (QWs) grown on GaN/sapphire have been studied by cathodoluminescence (CL) spectroscopy and imaged using an experimental setup especially developed for scanning near-field CL microscopy, which comb ...
Gradual clogging of the apertures of nanostencils used as miniature shadow masks in metal evaporations can be reduced by coating the stencil with self-assembled monolayers (SAM). This is quantified by the dimensions (height and volume) of gold features obt ...
