Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The size dependence of the coupling between longitudinal optical phonons and electron-hole pairs in InxGa1-xN/GaN quantum wells and quantum boxes has been investigated. The distribution of luminescence intensities between the phonon replicas and the zero-p ...
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 mum were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL effic ...
Continuous-wave and time-resolved optical spectroscopy is used to examine a variety of InGaN/GaN quantum-well and quantum-box samples. grown by molecular beam epitaxy. The results are analyzed in order to clarify the respective influences of electric field ...
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8 < T < 280 K). We investigate the influence of growing or not an AlGaN barrier on top of the active layer. We address the differences betw ...
We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density s ...
GaInN/GaN quantum dots have been grown by molecular beam epitaxy on sapphire substrates. By changing the size and composition of the dots, the emission energy can be tuned over the entire visible spectrum. We present time-resolved photoluminescence obtaine ...
Detailed investigation of the luminescence features due to the recombination of the exciton-free-carrier process in GaSe is presented. This process shows a well-resolved luminescence line and it is an efficient recombination process in this semiconductor, ...
The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
The interacting electron-hole system is investigated in the framework of non-equilibrium Green's functions. Using the Bethe-Salpeter equation in the ladder approximation we derive a set of equations for the polarization of the interacting electron and hole ...
The coexistence of localized and free holes in modulation doped InGaAs/InP quantum wells, which show Fermi edge singularities in the cw photoluminescence and excitation spectra, has been determined by picosecond time-resolved luminescence spectroscopy. A l ...